Your search returned 21 records. Click on the hyperlinks to view further details of Titles..
Magazine Name : Ieee Transactions On Electron Devices
Year : 2002Volume number : 49Issue:02
Sub-Ft Gain Resonance Of Inp/Ingaas-Hbts(Article) Subject:
Compound Semiconductor Devices
Author:
M
Rohner
page:
213
-
220
High Breakdown Characteristic 8-Doped Ingaas/Aigaas Tunneling Real-Space Transfer Hemt(Article) Subject:
Compound Semiconductor Devices
Author:
C. W
Hsu
Y W
Chen
page:
221
-
225
Silc As A Measure Of Trap Generation And Predictor Of Tbd In Ultrathin Oxides(Article) Subject:
Reliability
Author:
M A
Alam
page:
226
-
231
A Study Of Soft And Hard Breakdown Part 1: Analysis Of Statistical Percolation Conductance(Article) Subject:
Reliability
Author:
M A
Alam
page:
232
-
238
A Study Of Soft And Hard Breakdown Part Ii: Principles Of Area, Thickness, And Voltage Scaling(Article) Subject:
Reliability
Author:
M A
Alam
page:
239
-
246
On Interface And Oxide Degradation In Vlsi Mosfets-Part I: Deuterium Effect In Che Stress Regime(Article) Subject:
Reliability
Author:
D
Esseni
page:
247
-
253
On Interface And Oxide Degradation In Vlsi Mosfets-Part Ii: Fowler-Nordheim Stress Regime(Article) Subject:
Reliability
Author:
D
Esseni
page:
254
-
263
Ambipolar Schottky-Barrier Tfts(Article) Subject:
Silicon Devices
Author:
H. C
Lin
page:
264
-
270
A 0-2-Um 180-Ghz-Fmax 6.7-Ps-Ecl Soi/Hrs Self-Aligned Seg Sige Hbt/Cmos Technology For Microwave And High-Speed Digital Applications(Article) Subject:
Silicon Devices
Author:
K
Washio
page:
264
-
270
High-Speed Digital Applications(Article) Subject:
Silicon Devices
Author:
H
Shimamoto
page:
271
-
278
Design And Fabrication Of 50-Nm Thin-Body P-Mosfets With A Sige Heterostructure Channel(Article) Subject:
Silicon Devices
Author:
K. V
Subramaniam
page:
279
-
286
Analytical Modeling Of Quantization And Volume Inversion In Thin-Si-Film Dg Mosfets(Article) Subject:
Silicon Devices
Author:
L
Ge
page:
287
-
294
Ultralow Resistance W/Poly-Si Gate Coms Technology Using Amorphous-Sitin Buffer Layer(Article) Subject:
Silicon Devices
Author:
H
Wakabayashi
page:
295
-
300
A New Compact Dc Model Of Floating Gate Memory Cells Without Capacitive Coupling Coefficients(Article) Subject:
Silicon Devices
Author:
L
Larcher
page:
301
-
307
Threshold Voltage Roll-Up/Roll-Off Characteristic Control In Sub-0.2-Um Single Workfunction Gate Cmos For High-Performance Dram Applications(Article) Subject:
Silicon Devices
Author:
S
Inaba
page:
308
-
313
Characterization Of Deep Levels In Pt-Gan Schottky Diodes Deposited On Intermediate-Temperature Buffer Layers(Article) Subject:
Solid-State Device Phenomena
Author:
Bosco H
Leung
page:
314
-
318
Flicker Noise In Gate Overlapped Polycrystalline Silicon Thin-Film Transistors(Article) Subject:
Solid-State Device Phenomena
Author:
Mohammed
Rahal
page:
319
-
323
A Novel Approach For Focusing Electron Beams Using Low-Cost Ceramic Grid(Article) Subject:
Vacuum Electron Devices
Author:
Chi
Xie
page:
324
-
328
Transparent And Quasi-Transparent Regional Solutions To Minority-Carrier Transport In Arbitrarily Doped Semiconductors(Article) Subject:
Transport Systems
,
Quasi-Static
,
Transparent
Author:
L
Abenante
page:
329
-
330
Linear Cofactor Difference Method Of Mosfet Subthreshold Characteristics For Extracting Interface Traps Induced By Gate Oxide Stress Test(Article) Subject:
Mosfets
,
Subthreshold Logic
,
Linear
Author:
J. H
He
R
Huang
page:
331
-
333
Large-Area Lateral P-I-N Photodiode On Soi(Article) Subject:
Photodiode On Soi
Author:
Dr. Heiner
Zimmermann
page:
334
-
336